| 摘要 |
A semiconductor structure. The semiconductor structure includes: a substrate having a metal wiring level within the substrate; a capping layer on and above the substrate; an insulative layer on and above the capping layer; a first layer of photo-imagable material on and above the insulative layer; a layer of oxide on and above the first layer of photo-imagable material; a second layer of photo-imagable material on and above the layer of oxide; an inductor; and a wire bond pad. A first portion of the inductor is in the second layer of photo-imagable material, the layer of oxide, the first layer of photo-imagable material, the insulative layer, and the capping layer. A second portion of the inductor is in only the second layer of photo-imagable material. The wire bond pad in only the first layer of photo-imagable material, the insulative layer, and the capping layer.
|
