发明名称 Method, apparatus, and system for low temperature deposition and irradiation annealing of thin film capacitor
摘要 Some embodiments of the invention include thin film capacitors formed in a package substrate of an integrated circuit package. At least one of the thin film capacitors includes a first electrode layer, a second electrode layer, and a dielectric layer between the first and second electrode layers. Each of the first and second electrode layers and the dielectric layer is formed individually and directly on the package substrate. Other embodiments are described and claimed.
申请公布号 US7572709(B2) 申请公布日期 2009.08.11
申请号 US20060427532 申请日期 2006.06.29
申请人 INTEL CORPORATION 发明人 SEH HUANKIAT;MIN YONGKI
分类号 H01L21/20 主分类号 H01L21/20
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