| 摘要 |
In a CMOS image sensor (10) including a pixel array unit (12) having pixels arranged separately in even pixel lines and odd pixel lines, read-out of odd pixels of a short accumulation time is performed at an exposure start portion of the even pixels of a long accumulation time. Thus, even if the even pixels are saturated and a signal charge overflows from the even pixels and a part of the signal charge comes into the adjacent odd pixels, the read-out operation of the odd pixels is already complete. Accordingly, it is possible to eliminate the affect of the blooming to the signal of odd pixels when even pixels are saturated. The affect of blooming to a low-sensitive signal is eliminated when employing the wide-dynamic range method for differentiating the accumulation times between adjacent pixels. ® KIPO & WIPO 2009 |
