| 摘要 |
A manufacturing method of a semiconductor device is provided to improve a process yield of a semiconductor device by forming a residual oxide film of uniform thickness on a fuse line. A semiconductor substrate includes a monitoring part, a fuse part, and a pad part. A fuse line(102) and a polysilicon are successively formed on the fuse part of the semiconductor substrate. A first interlayer insulation film(106) is deposited on the polysilicon and the pad part. A second interlayer insulation film(108) is deposited on the first interlayer insulation film. A metal material and a preventing film(112) are successively formed on the second interlayer insulation film of the pad part. The protecting film is deposited on the fuse part and the pad part. A part of the preventing film and the polysilicon are exposed. The polysilicon is oxidized by a thermal oxidation process in order to form an oxide film.
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