发明名称 RESIST TREATMENT METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist treatment method that, in a multi-patterning method, can very finely and highly accurately form a pattern obtained by a resist composition for first resist pattern formation. <P>SOLUTION: The resist treatment method includes the steps of coating a first resist composition comprising a resin (A), which includes a group unstable against an acid, is insoluble or sparingly soluble in an aqueous alkali solution and, upon a reaction with an acid, can be dissolved in the aqueous alkali solution, a photoacid generating agent (B), a crosslinking agent (C), and a specific alkylammonium or alkylamine compound, on a substrate, drying the coating to form a first resist film, prebaking the first resist film, exposing the prebaked first resist film to light, subjecting the exposed first resist film to post exposure baking, developing the baked film to form a first resist pattern, subjecting the first resist pattern to hard baking, coating a second resist composition on the hard baked first resist pattern, drying the coating to form a second resist film; prebaking the second resist film, exposing the prebaked second resist film to light, subjecting the exposed second resist film to post exposure baking, and developing the baked second resist film to form a second resist pattern. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009175668(A) 申请公布日期 2009.08.06
申请号 JP20080227815 申请日期 2008.09.05
申请人 SUMITOMO CHEMICAL CO LTD 发明人 HATA MITSUHIRO;TAKADA YOSHIYUKI;YAMAGUCHI NORIFUMI;TAKEMOTO KAZUKI;MIYAGAWA TAKAYUKI
分类号 G03F7/40;G03F7/004;G03F7/039;H01L21/027 主分类号 G03F7/40
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