发明名称 |
MANUFACTURING METHOD OF BORON-DOPED MATERIAL FOR SEMICONDUCTOR |
摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive boron-doped material for a semiconductor in which quality of material is uniform, and the quantity of volatilizing boron is stable for every usage. SOLUTION: This manufacturing method of a boron-doped material for a semiconductor includes processes of converting material powder containing boron-containing crystalline glass powder to slurry; providing a green sheet by molding the provided slurry; and sintering the green sheet. COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009177129(A) |
申请公布日期 |
2009.08.06 |
申请号 |
JP20080245100 |
申请日期 |
2008.09.25 |
申请人 |
NIPPON ELECTRIC GLASS CO LTD |
发明人 |
NISHIKAWA YOSHIKATSU;IKEBE MASARU;MORI HIROKI;HASEGAWA YOSHINORI |
分类号 |
H01L21/223;C03C10/00 |
主分类号 |
H01L21/223 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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