发明名称 MANUFACTURING METHOD OF BORON-DOPED MATERIAL FOR SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To provide an inexpensive boron-doped material for a semiconductor in which quality of material is uniform, and the quantity of volatilizing boron is stable for every usage. SOLUTION: This manufacturing method of a boron-doped material for a semiconductor includes processes of converting material powder containing boron-containing crystalline glass powder to slurry; providing a green sheet by molding the provided slurry; and sintering the green sheet. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009177129(A) 申请公布日期 2009.08.06
申请号 JP20080245100 申请日期 2008.09.25
申请人 NIPPON ELECTRIC GLASS CO LTD 发明人 NISHIKAWA YOSHIKATSU;IKEBE MASARU;MORI HIROKI;HASEGAWA YOSHINORI
分类号 H01L21/223;C03C10/00 主分类号 H01L21/223
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