| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film semiconductor device that can suppress a decrease in mobility by heating and deterioration in characteristics and can improve heat resistance. SOLUTION: The thin-film semiconductor device has a semiconductor thin film 1 laminated on a gate electrode 13 via a gate insulation film 15. The semiconductor thin film 1 has a multilayer structure and includes at least two semiconductor layers a, a'. In this semiconductor thin film 1, an intermediate layer (b), which is composed of a material different from that of the semiconductor layers a, a', is sandwiched between the two semiconductor layers a, a'. The two semiconductor layers a, a' are composed of the same material, and the intermediate layer (b) is composed of an insulating material. The materials constituting such a multilayer structure are organic materials. COPYRIGHT: (C)2009,JPO&INPIT |
