METHOD FOR GROWING P-TYPE SIC SEMICONDUCTOR SINGLE CRYSTAL AND P-TYPE SIC SEMICONDUCTOR SINGLE CRYSTAL

摘要

In a method for growing a p-type SiC semiconductor single crystal on a SiC single crystal substrate, using a first solution in which C is dissolved in a melt of Si, a second solution is prepared by adding A1 and N to the first solution such that an amount of A1 added is larger than that of N added, and the p-type SiC semiconductor single crystal is grown on the SiC single crystal substrate from the second solution. A p-type SiC semiconductor single crystal is provided which is grown by the method as described above, and which contains 1 x 1020 cm3 of A1 and 2 x 1018 to 7 x 1018 cm3 of N as impurities.