| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that enables high speed data read and reduces the area of a drive circuit for activating a word line. SOLUTION: By signal transmission through a common word line CWL having a low resistance and coupled at a plurality of points to a word line, it is possible to read data at high speed. Further, since the common word line CWL is provided common to plurality of memory blocks BK, a word line driver 50C can be provided common to the plurality of memory blocks BK. Further, corresponding to a sub-digit line SDL, by disposing a latch circuit 92 for holding the active state of the common word line CWL, it is possible to transmit a row selection signal during data write through the common word line CWL, thereby reducing a metal wiring layer. COPYRIGHT: (C)2009,JPO&INPIT |
