| 发明名称 |
RESISTIVE MEMORY ELEMENT AND ITS MANUFACTURING METHOD |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a resistive memory element and its manufacturing method. <P>SOLUTION: The resistive memory element has a first electrode, a first insulating layer which is formed on the first electrode and has a first hole which exposes a part of the first electrode, a first resistance change layer which is brought into contact with the exposed first electrode and extended on the first insulating layer at a periphery of the first hole and a first switching element which is electrically connected to the first resistance change layer. The first switching element is a first diode. The first diode is provided on the first resistance change layer, a first intermediate electrode is interposed between the first resistance change layer and the first diode, and a second electrode is provided on the first diode. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
| 申请公布号 |
JP2009177181(A) |
申请公布日期 |
2009.08.06 |
| 申请号 |
JP20090012253 |
申请日期 |
2009.01.22 |
| 申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
LEE CHANG-BUM;PARK YOUNG-SOO;LEE MYOUNG-JAE;XIANYU WENXU;KANG BO-SOO;AHN SEUNG-EON;KIM KI-HWAN |
| 分类号 |
H01L27/10;H01L45/00;H01L49/00 |
主分类号 |
H01L27/10 |
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