| 摘要 |
<p>A method of manufacturing a semiconductor device includes providing a silicon semiconductor layer (14) over an insulating layer (12), and partially removing a first portion of the silicon layer (14). The silicon layer (14) includes the first portion and a second portion, and a thickness of the second portion is greater than a thickness of the first portion. Initially, the first and second portions of the silicon layer (14) initially can have the same thickness. A semiconductor device is also disclosed.</p> |
