发明名称 SEMICONDUCTOR SWITCH CIRCUIT
摘要 <p><P>PROBLEM TO BE SOLVED: To suppress reduction of a terminal voltage boosted due to an increase of a gate leak current even when a large power is transmitted when an ambient temperature is high, and to improve a harmonic distortion characteristic. <P>SOLUTION: Upon transmission, a step-up voltage V1 obtained by a step-up circuit 21 is applied to a gate of a first switch element 31 by a decoder circuit 22. On the other hand, 0V is applied to the gate of a second switch element 32, and the first switch element 31 becomes conductive and the second switch element 32 becomes non-conductive. Further, a third switch element 33 becomes conductive, and a diode 39 is set to a reverse-bias state. Therefore, even a gate leak current of the second switch element 32 increases, the reduction of the boosted terminal voltage can be avoided. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009177488(A) 申请公布日期 2009.08.06
申请号 JP20080013917 申请日期 2008.01.24
申请人 NEW JAPAN RADIO CO LTD 发明人 MORI MAKI;YOSHINAGA HIROYUKI;TOSHINAMI YOSHIYUKI
分类号 H03K17/693;H03K17/567;H03K17/687;H03K17/74 主分类号 H03K17/693
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