| 发明名称 |
ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODES BY INCREASED INDIUM INCORPORATION |
| 摘要 |
An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light emission than LED structures containing lesser In content. Polarization ratios should be higher than 0.7 at wavelengths longer than 470 nm.
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| 申请公布号 |
US2009194761(A1) |
申请公布日期 |
2009.08.06 |
| 申请号 |
US20090364258 |
申请日期 |
2009.02.02 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
MASUI HISASHI;YAMADA HISASHI;ISO KENJI;SPECK JAMES S.;NAKAMURA SHUJI;DENBAARS STEVEN P. |
| 分类号 |
H01L21/30;H01L33/16;H01L33/34 |
主分类号 |
H01L21/30 |
| 代理机构 |
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