METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR SUBSTRATE, COMPOUND SEMICONDUCTOR SUBSTRATE, AND LIGHT-EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound semiconductor substrate, in which a semiconductor light-emitting element having an excellent forward voltage (Vf) and stabilization voltage drop (ΔVf) can be obtained and the manufacturing cost is reducible.

SOLUTION: The method of manufacturing the compound semiconductor substrate includes at least the steps of: epitaxially growing a quaternary light-emitting layer comprising AlGaInP on a GaAs substrate; forming a p-type GaP window layer by vapor-phase deposition on one main surface (first main surface) of the quaternary light-emitting layer on the opposite side from the substrate; removing the GaAs substrate; and epitaxially growing an n-type GaP window layer on the main surface (second main surface) of the light-emitting layer on the side where the GaAs substrate is removed. The method of manufacturing the compound semiconductor substrate further includes a step of carrying out a heat treatment in a hydrogen atmosphere containing ammonia after the step of removing the GaAs substrate and before the step of epitaxially growing the n-type GaP window layer.

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