| 摘要 |
PROBLEM TO BE SOLVED: To provide a quenching characteristic with high linearity. SOLUTION: In the electroabsorption type semiconductor element having a layered structure obtained by successively laminating a first conductive semiconductor clad layer (n-type clad layer)11, a semiconductor light absorption layer 12, and a second conductive semiconductor clad layer (p-type clad layer) 13, the concentration of impurities added to each of the first conductive semiconductor clad layer 11 and the second conductive semiconductor clad layer 13 is increased toward the interface side with the semiconductor light absorption layer 12 so as to have a concentration gradient in the normal direction of the interface. COPYRIGHT: (C)2009,JPO&INPIT
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