MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of performing selective growth at a low temperature, and to provide a substrate processing apparatus. SOLUTION: The semiconductor device manufacturing method for disposing a substrate having at least silicon surface and an insulating film surface on its surface in a processing chamber and making an epitaxial film to selectively grow on the silicon surface by using the substrate processing apparatus for heating an atmosphere in the processing chamber and the substrate by using a heating means arranged on the outside of the processing chamber includes: a substrate carry-in process for carrying the substrate into the processing chamber; a first epitaxial growth process for selectively forming a silicon single-crystal film on the silicon surface by feeding dichlorosilane gas and hydrogen gas into the processing chamber; a second epitaxial growth process for feeding the dichlorosilane gas, the hydrogen gas and chlorine-based gas into the processing chamber after the first epitaxial growth process to form a silicon single-crystal film on the surface of the silicon single-crystal film formed in the first epitaxial growth process, and a substrate carry-out process for carrying out the substrate to the outside of the processing chamber. COPYRIGHT: (C)2009,JPO&INPIT