SULFUR ATOM-CONTAINING COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION AND METHOD FOR RESIST PATTERN FORMATION

摘要

Disclosed is a sulfur atom-containing composition for resist underlayer film formation that can form a resist underlayer film which can realize a high selecting ratio to a resist film in a dry etching rate, a low k value and a high n value at a short wavelength as in an ArF excimer laser, and can be formed into a resist pattern having a desired shape. When the composition is produced and used, a problem of odor attributable to a starting monomer does not occur. The sulfur atom-containing composition for resist underlayer film formation is a composition for the formation of a resist underlayer film for lithography, comprising a polymer having a disulfide bond (S-S bond) on a main chain thereof and a solvent. The polymer is a reaction product between at least one compound containing two epoxy groups (a diepoxy compound) and at least one dicarboxylic acid having a disulfide bond.