| 摘要 |
<p>A photoelectric converter which is improved in photoelectric conversion efficiency. The photoelectric converter is characterized by having at least one pin type photoelectric converting section constituted by laminating a first conductivity type layer, a first i-type layer, a second i-type layer and a second conductivity type layer. The photoelectric converter is also characterized in that the crystallization rate of the first i-type layer is lower than that of the second i-type layer, and the variation rate of crystallization rate at the interface of the i-type layer and the second i-type lay in the film thickness direction is 0.013-0.24 nm-1. ® KIPO & WIPO 2009</p> |
