<p>An interconnect structure that includes a dielectric material (52) having a dielectric constant of about 3.0 or less is provided. This low k dielectric material has at least one conductive material (60) having an upper surface embedded therein. The dielectric material also has a surface layer that is made hydrophobic (52B) prior to the formation of the noble metal cap (62). The noble metal cap is located directly on the upper surface of the at least one conductive material. Because of the presence of the hydrophobic surface layer on the dielectric material, the noble metal cap does not substantially extend onto the hydrophobic surface layer of the dielectric material that is adjacent to the at least one conductive material and no metal residues from the noble metal cap deposition form on this hydrophobic dielectric surface.</p>
申请公布号
WO2009097214(A1)
申请公布日期
2009.08.06
申请号
WO2009US31700
申请日期
2009.01.22
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;YANG, CHIH-CHAO;EDELSTEIN, DANIEL, C.;MCFEELY, FENTON, R.
发明人
YANG, CHIH-CHAO;EDELSTEIN, DANIEL, C.;MCFEELY, FENTON, R.