SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A substrate processing apparatus and a manufacturing method of the semiconductor device are provided to make the gas supply amount uniform by injecting the inert gas from the both sides of the process gas at the same time. A process chamber(4) receives a substrate(10) laminated to multi-stage and processes. A processing gas supply unit supplies at least one kind of process gas to the process chamber. The inactive gas feeding unit supplies the inactive gas to the process chamber. The exhaust unit exhausts the inside of the process chamber. The processing gas supply unit comprises at least one processing gas supplying nozzle(22a) supplying the process gas to the process chamber. The inactive gas feeding unit comprises a pair of inactive gas supply nozzles(22c) supplying the inactive gas to the process chamber. A controller(240) controls the processing gas supply unit and the inactive gas feeding unit.