| 摘要 |
A silicon epitaxial wafer and a manufacturing method thereof are provided to increase the quality of wafer by forming an auto doping prevention protective layer. An auto doping prevention protective layers are formed on the one side of silicon wafer(10). A silicon epitaxial layer is formed on the other side in which the auto doping prevention protective layer of the silicon wafer is not formed. The auto doping prevention protective layer comprises the first protective layer(11) having the compressive thermal stress, and the second protective layer(12) having the tensile thermal stress. In case the silicon wafer has the compressive thermal stress, the auto doping prevention protective layer has the tensile thermal stress. In case the silicon wafer has the tensile thermal stress, the auto doping prevention protective layer has the compressive thermal stress. The auto doping prevention protective layer is the silicon oxide layer(SiO2) or the SiON(SiOxNy).
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