<p>A variable resistance memory device is provided to suppress the resistance drift phenomenon by suppressing the volume expansion in the state change. The first conductive pattern(112) is formed on a substrate(100). A resistance alteration pattern(124) is formed on the first conductive pattern. The first stress buffer pattern(122) contacts with the resistance alteration pattern. The second conductive pattern(132) is formed on the resistance alteration pattern. The second stress buffer pattern contacts with the side of the resistance alteration pattern or a part among the lower surface of the resistance alteration pattern.</p>
