| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an MRAM structure which obtains more magnetic fluxes induced by infinite current lines around a magnetic memory cell due a proper modification of a layout, so that power consumption and write current are reduced. <P>SOLUTION: The memory cell comprises a plurality of conductive metal pillars arranged on both sides of an MTJ (magnetic tunnel junction) cell. A total magnetic field is increased by induction around the MTJ cell or the metal pillars, so that the intensity of a magnetic field on the MTJ cell is remarkably increased, thereby the write current of the MRAM is reduced. Thus lower power consumption of the MRAM is achieved. <P>COPYRIGHT: (C)2004,JPO</p> |
