| 摘要 |
With conventional device, the quantity of complex defects differs with each semiconductor device because the concentration of impurities intrinsically contained differs for each silicon wafer. Consequently, there is an undesirable variation in characteristics among the semiconductor devices. The invention provides a method for manufacturing PIN type diode which comprises an intermediate semiconductor region in which complex defects are formed. The method comprises introducing impurities (for example, carbon), which are the same kind of impurities intrinsically contained in the intermediate semiconductor region, into the intermediate semiconductor region, and irradiating the intermediate semiconductor region with helium ions to form point defects.
|
