MANUFACTURING METHOD OF GAN NANO-STRUCTURES BY PREPROCESSING OF SUBSTRATES

摘要

A method for fabricating GaN nanostructure is provided to adjust the amount and supply time of HCl gas in order to control the growth density of the GaN nanostructure according to the degree of pre-processed Ga. A method for fabricating GaN nanostructure comprises the following steps of: placing Ga in a Group III element container and supplying HCl gas only; and pre-processing a substrate(200) so that the nucleation process of the GaN occurs on the top of the substrate. The pre-processing time takes 3-10 minutes. The GaN nanostructure represents a nanorod or a nanowire.