A memory device and a memory data read method are provided to reduce an error in reading data by applying a new multi-level reading method to the multi-level cell memory. A memory device(200) comprises a multi bit cell array(210), a determination unit(220), and a buffer memory(230). The determination unit divides the multi bit cells of a memory page within the multi bit cell array into the first group and the second group, and the first group is composed of the multi bit cells having the higher threshold voltage than the reference voltage. The second group is composed of the multi bit cells having the lower-threshold voltage than the reference voltage. The determination unit updates the first and the second group through the change of the reference voltage. The buffer memory stores data about the multi bit cells of the first group and the second group.
申请公布号
KR20090083204(A)
申请公布日期
2009.08.03
申请号
KR20080009218
申请日期
2008.01.29
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
CHO, KYOUNG LAE;YU, DONG HUN;KONG, JUN JIN;SONG, SEUNG HWAN;PARK, YOON DONG;KIM, JONG HAN;LEE, YOUNG HWAN