| 摘要 |
<p>A manufacturing method of a non-volatile memory device for reducing a cost and improving yield is provided to secure an overlay process margin between the select line and the dielectric film due to forming the contact hole. A turner insulating layer(204) is formed on a semiconductor substrate(202) including an element isolation region and an active region. A gate conductive layer is formed on the turner insulating layer. The dielectric film is formed on the gate conductive layer. The etch mask pattern in which the bottom width becomes smaller than the top width is formed on the dielectric film. By using the etch mask pattern, a part of the dielectric film is removed and the contact hole is formed.</p> |
