发明名称 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF SETTING CHIP IDENTIFICATION SIGNAL THEREOF
摘要 <p>A semiconductor memory device and a method for generating a chip identification signal are provided to reduce a manufacturing cost by manufacturing a plurality of memory chips using the same mask pattern. A semiconductor memory device includes a plurality of memory chips(20-1 to 20-i). Each memory chip includes a power-up signal generator and a chip identification signal generator(24-1 to 24-i). The power-up signal generator generates the power-up signal by sensing the change of the power voltage in a power-up operation. The chip identification signal generator generates the chip identification signal by performing a counting operation in response to the input sensing signal of the first terminal or the power-up signal. The chip identification signal generator generates the output sensing signal by sensing the change of the chip identification signal. The power-up signal maintains the first level until the power voltage reaches the predetermined level. If the power supply voltage exceeds the predetermined level, the power-up signal is transited to the second level.</p>
申请公布号 KR20090082808(A) 申请公布日期 2009.07.31
申请号 KR20080008771 申请日期 2008.01.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, KI TAE
分类号 G11C7/10;G11C5/14;G11C29/00;H01L23/12 主分类号 G11C7/10
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