| 摘要 |
THERE HAS BEEN A PROBLEM THAT THE MANUFACTURING PROCESS IS COMPLICATED AND THE NUMBER OF PROCESSES IS INCREASED WHEN A TFT WITH AN LDD STRUCTURE OR A TFT WITH A GOLD STRUCTURE ID FORMED.IN A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, AFTER LOW CONCENTRATION IMPURITY REGIONS (24,25) ARE FORMED IN A SECOND DOPING PROCESS, A WIDTH OF THE LOW CONCENTRATION IMPURITY REGION WHICH IS OVERLAPPED WITH THE THIRD ELECTRODE (18C) AND A WIDTH OF THE LOW CONCENTRATION IMPURITY REGION WHICH IS NOT OVERLAPPED WITH THE THIRD ELECTRODE CAN BE FREELY CONTROLLED BY A FOURTH ETCHING PROCESS.THUS, IN A REGION OVERLAPPED WITH THE THIRD ELECTRODE, A RELAXATION OF ELECTRIC FIELD CONCENTRATION IS ACHIEVED AND THEN A HOT CARRIER INJECTION CAN BE PREVENTED. AND, IN THE REGION WHICH IS NOT OVERLAPPED WITH THE THIRD ELECTRODE, THE OFF-CURRENT VALUE CAN BE SUPPRESSED. |
