SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To successfully implant Cu in a fine pattern and to suppress diffusion of Cu into an interlayer insulating film. SOLUTION: In a semiconductor device, lower-layer wiring 102 is formed in an insulating film 101 on the semiconductor substrate, upper-layer wiring 112 is formed in the interlayer insulating film 104 on the insulating film 101, and the lower-layer wiring 102 and upper-layer wiring 112 are connected through a via plug 111 formed in the interlayer insulating film 104. The via plug 111 and upper-layer wiring 112 each have first and second barrier metal films 107 and 108 and a Cu film 110 laminated in order, wherein the first barrier metal film 107 contains nitrogen and the second barrier metal film 108 contains platinum group metals. COPYRIGHT: (C)2009,JPO&INPIT