METAL COMPOUND, CHEMICAL VAPOR DEPOSITION MATERIAL CONTAINING THE SAME, AND METHOD FOR PRODUCING METAL-CONTAINING THIN FILM

摘要

Disclosed are a novel metal compound represented by the general formula (1) below, a chemical vapor deposition material containing the metal compound, and a method for producing a metal-containing thin film by chemical vapor deposition using the material. Among the compounds represented by the general formula (1) below, those wherein X is a chlorine atom are preferable since the raw material is highly volatile and can be obtained at low cost. When M is a titanium atom, those compounds wherein m is 1 are preferable since the difference between the volatilization temperature (vapor temperature) and the film deposition temperature (reaction temperature) is large and wide process margin can be obtained. (In the formula, M represents titanium, zirconium or hafnium; X represents a halogen atom; and m represents 1 or 2.)