SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCTION THEREOF
摘要
<p>A recess (21) is formed in a pMOS region (2). An SiGe layer (22) is formed so as to cover the bottom surface and the side wall of the recess (21). An SiGe layer (23) having a lower Ge content than that in the SiGe layer (22) is formed on the SiGe layer (22). An SiGe layer (24) is formed on the SiGe layer (23).</p>
