| 摘要 |
PROBLEM TO BE SOLVED: To provide a high proximity gettering effect, even if it is an epitaxial wafer, in a semiconductor wafer manufacturing method and a semiconductor wafer. SOLUTION: The method includes a process to carry out a heat treatment for an epitaxial wafer W, which has an epitaxial layer EP formed by epitaxially growing silicon single crystals on the surface of a silicon substrate SUB, in a gas atmosphere. The gas atmosphere of the process contains a nitride gas. COPYRIGHT: (C)2009,JPO&INPIT
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