| 摘要 |
PROBLEM TO BE SOLVED: To provide a dual wavelength semiconductor laser device including an infrared semiconductor laser and a red semiconductor laser monolithically integrated and having a COD level capable of sufficiently supporting a high output. SOLUTION: The dual wavelength semiconductor laser device includes the infrared semiconductor laser 1 and the red semiconductor laser 2 on a substrate 11. The infrared semiconductor laser and the red semiconductor laser include first clad layers 22 and 42 formed on the substrate, active layers 23 and 43 formed on the first clad layers, and second clad layers 24 and 44 formed on the active layers. The active layer 23 of the infrared semiconductor laser includes barrier layers formed of AlGaAs and well layers formed of GaAs which are alternately laminated. The active layer 43 of the red laser includes barrier layers formed of AlGaInP and well layers formed of GaInP which are alternately laminated. The thickness of the active layer of the infrared semiconductor layer is thinner than that of the active layer of the red semiconductor laser. Impurities are diffused in both the active layers in the vicinity of beam emitting end surfaces of the infrared semiconductor laser and the red semiconductor laser. COPYRIGHT: (C)2009,JPO&INPIT
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