发明名称 |
FILL-IN ETCHING FREE PORE DEVICE |
摘要 |
A memory cell includes a memory cell layer with a first dielectric layer over a bottom electrode layer, a second dielectric layer over the first dielectric layer, and a top electrode over the second dielectric layer. The dielectric layers define a via having a first part bounded by the first electrode layer and the bottom electrode and a second part bounded by the second dielectric layer and the top electrode. A memory element is within the via and is in electrical contact with the top and bottom electrodes. The first and second parts of the via may comprise a constricted, energy-concentrating region and an enlarged region respectively. The constricted region may have a width smaller than the minimum feature size of the process used to form the enlarged region of the via. A method for manufacturing a memory cell is also disclosed.
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申请公布号 |
US2009189138(A1) |
申请公布日期 |
2009.07.30 |
申请号 |
US20080020717 |
申请日期 |
2008.01.28 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LUNG HSIANG-LAN;LAM CHUNG HON;BREITWISCH MATTHEW J.;CHEN CHIEH FANG |
分类号 |
H01L45/00;H01L21/4763 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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