| 摘要 |
<p>Provided is a structure wherein a contact hole, typically, a gate terminal hole, a data terminal hole, a pixel connecting hole or the like, arranged on a thin film transistor substrate, has low connection resistance and high reliability. The structure is provided with a lower layer metal film (for instance, a first metal film (2)) arranged on an insulating substrate; an insulating film (for instance, a first insulating film (6) and a second insulating film (14)), which is arranged on the lower layer metal film and has an opening section; an interlayer connecting layer (22), which is arranged to extend and cover at least the lower metal film exposed from the opening section and an insulating film edge section of the opening section and is formed by solidifying a conductive liquid material; and an upper layer metal film (for instance, a terminal protection pattern (21)) arranged on the interlayer connecting layer so as to be brought into contact with the insulating film over the cover boundary region of the interlayer connecting layer. The thickness of the lower layer metal film exposed from the opening section is less than that of the lower layer metal film on a part not exposed from the opening section.</p> |
