| 摘要 |
PROBLEM TO BE SOLVED: To improve coverage of a wiring material by improving the shape of a contact hole, and to prevent leak current by diffusion of the wiring material into a first conductivity type semiconductor substrate. SOLUTION: This semiconductor device is provided with a second conductivity type high-concentration diffusion layer formed on the first conductivity type semiconductor substrate, and the contact hole for jointing the wiring material thereto, and characterized by being patterned after depositing a barrier metal film and the wiring material after forming the contact hole. In the semiconductor device, the coverage of the wiring material is improved by forming a single layer of an insulation film or multiple layers of insulation films having nearly-equal thermal expansion coefficients in the vicinity of a contact surface of the second conductivity type high-concentration diffusion layer to the wiring material, and the leak current is prevented by diffusing the wiring material into the first conductivity type semiconductor substrate by suppressing deterioration of the barrier metal film. COPYRIGHT: (C)2009,JPO&INPIT
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