发明名称 |
FERROELECTRIC MEMORY DEVICE |
摘要 |
Provided is a ferroelectric memory device. The ferroelectric memory device includes an inorganic channel pattern on a substrate, a source electrode and a drain electrode spaced apart from each other on the substrate and contacting the inorganic channel pattern, a gate electrode disposed adjacent to the inorganic channel pattern, and an organic ferroelectric layer interposed between the inorganic channel pattern and the gate electrode.
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申请公布号 |
US2009189152(A1) |
申请公布日期 |
2009.07.30 |
申请号 |
US20090354990 |
申请日期 |
2009.01.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO BYEONG-OK;LEE MOON-SOOK;RYOO MAN-HYOUNG;KIM JUNG-HYEON;YASUE TAKAHIRO |
分类号 |
H01L51/00;H01L29/76 |
主分类号 |
H01L51/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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