发明名称 |
ZnO SEED LAYER, ZnO WHISKER PATTERN AND METHOD FOR MANUFACTURING THEM |
摘要 |
PROBLEM TO BE SOLVED: To provide: a ZnO whisker pattern which is formed on a patterned seed layer formed by irradiation with light; a method for manufacturing them; and applications of the ZnO whisker pattern. SOLUTION: The method for manufacturing the ZnO whisker pattern comprises: forming an area of a layer of zinc acetate hydrate or zinc nitrate hydrate and an area of a layer of zinc acetate anhydride or zinc nitrate anhydride on a substrate; and then immersing the substrate into a reaction system of a prescribed temperature, at which zinc oxide is deposited, to convert the layer of the zinc acetate anhydride or zinc nitrate anhydride being a seed layer into a ZnO crystal layer of ZnO nano-particles or a ZnO single crystal and at the same time, to prepare the ZnO whisker pattern by performing crystal growth of ZnO whisker on the ZnO crystal layer. The ZnO whisker pattern is useful for manufacturing devices, and a highly conductive member including the ZnO whisker pattern is also provided. COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009167038(A) |
申请公布日期 |
2009.07.30 |
申请号 |
JP20080005051 |
申请日期 |
2008.01.11 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
HU XIULAN;MASUDA YOSHITAKE;KATO KAZUMI |
分类号 |
C30B29/62;B82B1/00;B82B3/00;C01G9/02;H01B5/14;H01B13/00;H01M14/00 |
主分类号 |
C30B29/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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