SOLID-STATE IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC INFORMATION EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a solid-state imaging element and a manufacturing method thereof that can simplify manufacturing steps, and electronic information equipment using the solid-state imaging element for an imaging unit. SOLUTION: An antireflective film 42 provided on a photodetector section and a gate side wall film 41 of a transistor of a peripheral circuit of the photodetector section area are formed of a common silicon nitride film 4 formed at the same time, so a silicon nitride film which is as thick as the gate side wall film 41 having a large film thickness is formed first and then formed so as to be a desired film thickness of the antireflective film 42 by using a mask having an opening only on a pixel section. Consequently, it is enough for the silicon nitride film 4 to be formed once. COPYRIGHT: (C)2009,JPO&INPIT