| 摘要 |
A semiconductor device having a source electrode and a drain electrode formed over a semiconductor substrate, a gate electrode formed over the semiconductor substrate and disposed between the source electrode and the drain electrode, a protection film made of an insulating material and formed between the source electrode and the gate electrode and between the drain electrode and the gate electrode, and a gate side opening formed at least in one of a portion of the protection film between the source electrode and the gate electrode and a portion of the protection film between the drain electrode and the gate electrode and disposed away from all of the gate electrode, the source electrode and the drain electrode.
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