发明名称 ANGLED-WEDGE CHROME-FACE WALL FOR INTENSITY BALANCE OF ALTERNATING PHASE SHIFT MASK
摘要 <p>A method and structure for a phase shift mask having a light reducing layer with sloped sidewalls. In some embodiments, the sloped sidewalls can help improve the image imbalance. The mask comprising: a substrate having a first region, a second region and a third region; the third region position between the first region and the second regions; an light reducing layer over the substrate having a first opening over the first region and a second opening over the second region; the first opening and the second opening defined by light reducing layer sidewalls; the sidewalls of the opaque layer are slanted at an angle less than 90 degrees with the plane of the top surface of the substrate.</p>
申请公布号 SG153803(A1) 申请公布日期 2009.07.29
申请号 SG20090038688 申请日期 2006.10.13
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD 发明人 SOON CHUA GEK;KIM TAN SIA;QUNYING LIN;JUI TAY CHO;CHENGGEN QUAN
分类号 主分类号
代理机构 代理人
主权项
地址