发明名称 |
ANGLED-WEDGE CHROME-FACE WALL FOR INTENSITY BALANCE OF ALTERNATING PHASE SHIFT MASK |
摘要 |
<p>A method and structure for a phase shift mask having a light reducing layer with sloped sidewalls. In some embodiments, the sloped sidewalls can help improve the image imbalance. The mask comprising: a substrate having a first region, a second region and a third region; the third region position between the first region and the second regions; an light reducing layer over the substrate having a first opening over the first region and a second opening over the second region; the first opening and the second opening defined by light reducing layer sidewalls; the sidewalls of the opaque layer are slanted at an angle less than 90 degrees with the plane of the top surface of the substrate.</p> |
申请公布号 |
SG153803(A1) |
申请公布日期 |
2009.07.29 |
申请号 |
SG20090038688 |
申请日期 |
2006.10.13 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD |
发明人 |
SOON CHUA GEK;KIM TAN SIA;QUNYING LIN;JUI TAY CHO;CHENGGEN QUAN |
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