Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel region,申请号GB20090008632-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel region
摘要
申请公布号	GB2456712(A)	申请公布日期	2009.07.29
申请号	GB20090008632	申请日期	2007.10.26
申请人	ADVANCED MICRO DEVICES, INC	发明人	ANDREAS GEHRING;ANDY WEI;ANTHONY MOWRY;MANUJ RATHOR
分类号	H01L21/8234;H01L21/8238	主分类号	H01L21/8234
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Electrostatic precipitator.

Compact security interface with majority voting.

Vehicle number plate illuminating device, and process for making a cover glass for such an illuminating device.

Control system for the steering of a vehicle.

Resorbable fixation device with controlled stiffness for treating bodily material in vivo and introducer therefor.

Pinch clip lid for non-hermetic packages.

Double-stranded RNA correction of aberrant metabolic pathways associated with uncontrolled tumor cell and virus growth cycles.

Substituted 1,2,3- thiadiazole-4-thiolates.

Information processing apparatus incorporating branch target instruction buffer.

高温高速双重液流染色机装置

Optical crosstalk attenuation for an optical disk drive.

Thermal modulation inlet system for gas chromatography.

Method and apparatus for merging independently generated internal video signal with external video signal.

Strip feeder for terminal applicator.

Compressor, and method of manufacturing same.

Superconducting detection coils.

Method of producing superconducting wire.

Apparatus for controlling oil pressure for vehicular automatic transmission.

System and method for picture image processing.

Process for the enzymatic preparation of 7-amino-cephalosporanic acids.