| 摘要 |
A flash memory device may include a memory cell array having a plurality of word lines, bit lines, and memory cells. Each memory cell may be arranged at an intersection of a corresponding word line and a corresponding bit line. The device may include a bit line voltage setting circuit for setting a voltage on a bit line of a given memory cell to be programmed to a variable bit line voltage or to a ground voltage. A variable bit line voltage generating circuit may be provided in the flash memory device for generating the variable bit line voltage. To facilitating programming of the device, a bit line voltage of a given memory cell to be programmed may be set based on a supply voltage of the device, so as to maintain a voltage difference based on the set bit line voltage above a given threshold voltage.
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