| 摘要 |
A method for manufacturing a semiconductor device includes the steps of forming an interconnection layer including a top tungsten layer, forming a mask pattern on the tungsten layer, nitriding a portion of the tungsten layer in a plasma nitriding process to form a tungsten nitride layer, etching the tungsten nitride layer while leaving the mask pattern on the tungsten layer, and patterning the interconnection layer by using the mask pattern as an etching mask.
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