| 摘要 |
A contact plug of a semiconductor device and a formation method thereof for preventing the generation of void within a contact plug are provided to improve the yield increment and reliability and prevent the electrical characteristic deterioration of the semiconductor device. A contact plug of a semiconductor device comprises a first contact plug and a second contact plug. The first contact plug is the elliptic type. The second contact plug is formed on the top of the first contact plug. The second contact plug is the circular shape. A semiconductor substrate(100) in which a first interlayer insulating film(104) is formed is provided. The source contact hole and first drain contact holes are formed on the first interlayer insulating film. A first conductive film is filled inside the source contact hole. A second inter metal dielectric is formed on the top of the first interlayer insulating film and the first conductive film. The second conductive film is filled up inside second drain contact holes.
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