| 摘要 |
A plasma etching apparatus is provided to rapidly exhaust a gas of a top side region of a bottom electrode through a tilted surface by reducing gas flow resistance of the top side region of the bottom electrode. A plasma etching apparatus includes a chamber, a substrate supporting part(200), a shielding part, a top electrode part, and a bottom electrode part(500). The chamber has a reaction space. The substrate supporting part and the shielding part are positioned in the reaction space. The substrate supporting part and the shielding part expose an edge region of a substrate. The electrode part and the bottom electrode part are positioned in a top side and a bottom side of the edge region of the substrate. Plasma is generated between the top electrode part and the bottom electrode part. At least a part of a surface of the bottom electrode part faced with the top electrode part has a downward slope.
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