| 摘要 |
A semiconductor memory device comprising decoding signals communicated solely in a word line direction is provided. The semiconductor memory device comprises a sub-array comprising a plurality of memory cells, a plurality of enable signal generators adapted to generate word line enable signals, a plurality of decoding signal generators adapted to generate decoding signals, a plurality of inverted decoding signal generators adapted to generate inverted decoding signals, and a word line driver area comprising a plurality of sub-word line drivers. Each sub-word line driver is adapted to drive a word line in accordance with one of the word line enable signals and a pair of first signals comprising one of the decoding signals and one of the inverted decoding signals. The word line enable signals and the decoding signals are communicated to the sub-word line drivers solely in a word line direction.
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