| 摘要 |
Micro-electronic device for measurement of heat power relates to control-measuring equipment. Device includes field transistor, passive inductance, capacitor and first and second power sources. To gate of field transistor film of pyro-electric is sputtered, and emission absorber. To the device additionally is included bipolar transistor with sputtered on base film of pyro-electric and emission absorber. At that the gate of the field transistor is connected to the first pole of the first voltage source, its second pole is connected to collector of bipolar transistor. Sink of field transistor and emitter of bipolar transistor are connected to each other. Base of bipolar transistor is connected to the sink of field transistor to which first output terminal is connected, and first output of passive inductance. Second output of passive inductance is connected to the second pole of the second voltage source, collector of bipolar transistor and second pole of first voltage source, those form common bus to which second output terminal is connected. Device provides increase of sensitivity and accuracy of measurement. |
