MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent abnormal growth or loss of a contact plug and to improve a yield of the semiconductor device by burying easily a contact hole. An interlayer dielectric(103) and a hard mask pattern are formed on a semiconductor substrate(101). A contact hole is formed on the interlayer dielectric by performing an etch process using the heard mask pattern. A contact plug conductive material is formed on the semiconductor substrate including the interlayer dielectric and the hard mask pattern in order to bury the contact hole. A contact plug(113a) is formed by etching the contact plug conductive material to expose an upper part of the contact hole. A first conductive layer(115a) is formed on the hard mask pattern. A thermal process is performed to cover the surface of the contact plug with the first conductive layer. A second conductive layer(115b) is formed on the first conductive layer. A metal line(119) is formed by patterning the second and first conductive layers. The hard mask pattern is removed.